Fundamentals of Modern VLSI Devices

effective normal field base doping profile emitter delay time modern bipolar devices nonuniformly doped case nonscaling factors gate depletion width channel length direction quasineutral base region collector current density collector doping profile inversion charge density collector doping concentration nonscaling effects nonuniform channel doping pedestal collector retrograde channel profile base doping concentration modern bipolar transistors base widening velocity saturation model deep emitter device design purposes electron current entering buffered delay